Sunday, September 13, 1998

17:00 - 19:00 Registration

19:00 - 21:00 Opening Dinner

Welcome from Conference Chair

Welcome from Engineering Foundation

21:00 - 22:00 Reception

Monday, September 14, 1998

07:00 - 08:30 Breakfast

08:30 - 08:45 Conference Introduction
E.A. Fitzgerald
Massachussett Institute of Technology

MORNING SESSION
Session Chair: E.A. Fitzgerald, MIT

08:45 - 09:25 Modelling Thin Film Strain Relaxation Behavior
D.D. Perovic
University of Toronto

09:25 - 10:05 Structural Development of SiGe/Si Heterostructuros:self ordering and growth dynamics
S. H. Christiansen
University of Erlangen-Nurnberg

10:05 - 10:35 Coffee Break

10:35 - 11:15 The Influence of Growth Kinetics on the Relaxation of Epitaxially grown LPCVD Si1-xGex
K. Grimm
Laboratory of ECTM, DIMES

11:15 - 11:55 SiGe/Si Quantum well devices for Si microelectronics
David J. Robbins
Defence Evaluation & Research Agency

12:00 - 14:00 Lunch

14:00 - 16:00 Ad hoc sessions / Free time

16:00 - 16:40 Ge Ion Implantation for the Formation of Si/GexSi1-x Heterostructures.Application to Heterojunction Bipolar Transitors
S. Lombardo
IMETEM-CNR

16:40 - 17:20 Oscillatory Strain Relaxation in Solid Phas Epitaxially Regrown Silicon on Sapphire
Wadad Dubbelday
University of California, San Diego

17:20 - 17:50 Coffee Break

EVENING SESSION
Session Chair: Y.H. Xie, Lucent Technologies

17:50 - 18:30 X-Ray Difraction and Topography Studies of Strain Release in InGaAs/GaAs and GeSi/Ge eterostructures
Claudio Ferrari
C.N.R. Maspec Institute

18:30 - 19:10 Review of Monte Carlo Simulations of Strained Si1-x-yGexCy and Si1-x Cx Semiconductor alloys
Pantelis C. Kelires
University of Crete

19:10 - 19:50 Dependence of the Lattice Parameter on Carbon Concentration and Structural Stability of Si1-y Cy and Si1-x-y GexCy Alloys
M. Berti
INFM at the Physics Deparment., University of Padova

19:50 - 20:30 Energy Loss Rates of Two-dimensional hole gases in Gated Si/Si0.8 Ge0.2 heterostructures
G. Ansaripour
Department. of Physics, Warwick University

20:30 - 22:00 Dinner

22:00 Social Hour

Tuesday, September 15, 1998

07:00 - 08:30 Breakfast

MORNING SESSION
Session Chair: M.S. Goorsky, University of California Los Angeles

08:30 - 09:05 Low Defect Density Planner Surface Y-substrates with 100% Ge on (100) Si
C.J. Patel
France Telecom-CNET

09:05 - 09:40 GaAs Integration with Si via a relaxed Ge layer
I. Sagnes
France Telecom-CNET

09:40 - 10:15 Epitaxial Matching and Defects
D.B. Holt
Imperial College of Science, Tech. & Medicine

10:15 - 10:45 Coffee Break

10:45 - 11:20 Relaxed Graded Layers: SiGe/Si and InGaAs/GaAs
E.A. Fitzgerald
Massachusetts Institute of Technology

11:20 - 11:55 Highly-controlled GaAs/Ge Interfaces and Implications for
III-V Optoelectronic Integration onto group IV Substrates
S.A. Ringel
Ohio State University

12:00 - 14:00 Lunch

14:00 - 16:00 Ad hoc sessions / Free time

EVENING SESSION
Session Chair:S.A. Ringel, Ohio State University

17:30 - 18:15 Strain Relaxation and Step Evolution in Solar Cells Grown on Ge Substrates
M. S. Goorsky
University of Californa Los Angeles

18:15 - 19:00 Characterization and Control of ZnSe/GaAs Heterovalent Interfaces in Molecular -beam Epitaxy
T. Hanada
Tohoku University

19:00 - 19:45 The Phonon-drag Thermopower in Si:B and Si:Sb delta doped samples
S. Agan
Department. of Physics, University of Warwick

20:00 - 22:00 Dinner

22:00 Social Hour

Wednesday, September 16, 1998

07:00 - 08:30 Breakfast

MORNING SESSION
Session Chair: G. Salviati, CNR-MASPEC

08:30 - 09:00 Strain Relaxation under Compressive or Tensile Stress
A.V. Drigo
INFM at the Physics Deparment., University of Padova

09:00 - 09:30 Relaxation and Surface Morphology of Heteroepitaxial Layers Grown on Vicinal Plane Substrates
P.J. Goodhew
University of Liverpool

09:30 - 10:00 Growth and Characterization of Relaxed Buffer Layers
D.J. Dunstan
Queen Mary & Westfield College

10:00 - 10:30 Coffee Break

10:30 - 11:00 Coherence Length of Strain Relaxation Mechanisms in InGaAs epilayers
F. Romanato
INFM-TAS at Elettra Synchrotron

11:00 - 11:30 Study of Dislocation Distribution in Graded InGaAs/GaAs Buffer Layers
S. Germund
INFM-Deparment of Physics, University of Padova

11:30 - 12:00 Sub-Quarter Micrometer HEMTís Based on the
N-AlGaAs/InGaAs/GaAs-Pseudomorphic Quantum Wells and N-InAlAs/InGaAs/InAlas-Metamorphic Heterostructures Grown on the Lattice Mismatched GaAs Substrates
V.G. Mokerov
Institute of Radio Engineering & Electronics of Russian Academy of Sciences

12:00 - 14:00 Lunch

12:00 - 23:00 (Optional) Excursion to Florence (boxed lunches provided)
Dinner on your own in Florence

20:00 - 22:00 Dinner for those not on optional excursion

22:00 - Social Hour

Thursday, September 17, 1998

07:00 - 08:30 Breakfast

MORNING SESSION
Session Chair: Peter Goodhew, University of Liverpool

08:30 - 09:05 Fabrication of Regularly Distributed Ge Quantum Dot Arryas on Si
Y.H. Xie
Bell Lahs., Lucent Technologies

09:05 - 09:40 Elastic Relaxation in Ge Islands
Guenther Bauer
Institut fuer Halbleiterphysik, Johannes Kepler Universitat Linz

09:40 - 10:15 Preparation of Red Light Emitting Self-Assembling InP/GaInP Quantum Dots Injection Lasers
K. Eberl
Max-Planck-Institut fur Festkorperforschung

10:15 - 10:45 Coffee Break

10:45 - 11:20 A Rheed/STM Study of InAs Growth on the Three Low Index Orientations of GaAs-2-D Versus 3-D Growth and Strain Relaxation
B.A. Joyce
Semiconductor Materials Interdisciplinary Research Centre

11:20 - 11:55 Strained InGa Quantum Wires Grown on High Index V-Grooved GaAs Substrates:From the Structural and Optical Properties to the Device Perfomances
R. Rinaldi
INFM-Dipartimento di Scienza dei Materiali, Universita degli Studi di Lecce

12:00 - 13:30 Lunch

AFTERNOON SESSION
Session Chair: A.V. Drigo, University of Padova

13:30 - 14:00 Design and MOVPE Growth of Compensated Strain Multi- quantum well InGaAs(P)/InGa(As)P Structures on InP substrate and their application for Optoelectronic Devices
A. Ougazzaden
France Telecom-CNET/PAB

14:00 - 14:30 Characterization of Interfaces in InP Heterostructures
Laura Lazzarini
MASPEC-CNR Institute

14:30 - 15:00 Opttical Amplifiers Based on Strained Multiple Quantum Wells
D. Campi
CSELT

15:00 - 17:30 Ad hoc Session / Free Time

EVENING SESSION
Session Chair: Doug Perovic, University of Toronto

17:30 - 18:05 Limiting Factors in the Relaxation of Strained Heteroepitaxial Layers
R. Beanland
GEC-Marconi Materials Tech. Ltd.

18:05 - 18:40 Threading Dislocation Reduction in Strained Layers
J. Speck
University of California, Santa Barbara

18:40 - 19:15 Low-Melting-Point Accommodation Layer for Metamorphic Growth of III-Vís
J.C. Harmand
France Telecom-CNET-Laboratoire de Gagneux

19:15 19:50 Mott Transition Field Effect Transistor
D.M. Newns
IBM T.J. Watson Research Center

20:00 - 22:00 Conference Dinner: Rustic Italian Dinner

22:00 - Social Hour

Friday, September 18, 1998

07:00 - 08:30 Breakfast

MORNING SESSION
Session Chair: J. Speck, University of California Santa Barbara

08:30 - 09:00 Growth and Characterization of Thin Films and Patterned Structures of AlN, GaN and AlxGa1-xN on 6H-SiC(001) Substrates
Robert F. Davis
North Carolina State University

09:00- 09:30 The Role of Buffer Layers to Improve the Growth of GaN on Si(111)
S.I. Molina
Departimento di Ciencia de los Materiales e I.M. y Q.L,
Universidad de Cadiz

09:30 - 10:00 Bulk HVPE GaN
C. Zanetti-Fregonara
CNR-MASPEC Inst.

10:00 - 10:30 Coffee Break

10:30 - 11:00 Study of Optically Active Defects in GaN and AlGaN Epilayers
G. Salviati
CNR-MASPEC Inst.

11:00 - 11:30 Alloying and Strain in InGaN and AlGaN
M. Stutzmann
Walter Schottky Institut der Technischen Universitat Munchen

11:30 - 12:00 Ordering, Polytypism, and Phase Seperation in AlGaN and InGaN
M. Albrecht
University of Erlangen-Nurnberg

12:00 - 13:30 Closing Lunch

14:00 Bus Departure to Pisa

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