Preliminary Program

Engineering Foundation Conference on
High-Temperature Electronic Materials, Devices and Sensors
February 22-27, 1998
San Diego, California, USA

Technical Co-Sponsorship
IEEE Electron Devices Society
IEEE Instrumentation and Measurement Society

Co-Chairs
Ilan Golecki
AlliedSignal, Inc., Morristown, NJ, USA
Ilan.Golecki@alliedsignal.com

Elzbieta Kolawa
Jet Propulsion Laboratory, Pasadena, CA, USA
eak@cco.caltech.edu

Engineering Foundation and IEEE Liaison
Bernard Gollomp
Bernard.Gollomp@alliedsignal.com

Session 1: SiC Materials (Monday, 9:15 am - 11:45 pm)
Welcome and Introduction...(Monday, 9:15 - 9:30 am)
Ilan Golecki, Elzbieta Kolawa, Bernard Gollomp

State-of-the-art in defect control of bulk SiC (Invited)...9:30-10:30 am
Andrei S. Bakin
Department of Microelectronics, St. Petersburg Electrotechnical University, Russia

Break...10:30-10:45 am

Hydrogen and helium implants for obtaining high resistance layers in N-type 4H-silicon carbide...10:45-11:15 am
R.K. Nadella
Division of Engineering and Computer Science, Wilberforce University, Wilberforce, OH, USA

Polytypism and SiC single crystals growth processes...11:15-11:45 am
V.P. Rastegaev(1), D.D. Avrov(1), S.I. Dorozhkin(1), A.O. Lebedev(2) and Yu.M. Tairov(1)
(1)Dept. of Microelectronics, St. Petersburg Electrotechnical University, St. Petersburg, Russia
(2)A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St. Petersburg, Russia

Session 2: SiC Devices I (Monday, 7:30-10:00 pm)
Recent advances in high-temperature, high-frequency SiC devices (Invited)...7:30-8:30 pm Charles D. Brandt
Northrop-Grumman Science and Technology Center, Pittsburgh, PA, USA

Numerical simulation of 3C-SiC MESFET based on the Lei-Ting hydrodynamic balance equations...8:30-9:00 pm
X.M. Weng and H.L. Cui
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, NJ, USA

SiC Hall effect device...9:00-9:30 pm
V.P. Rastegaev, S.A. Reshanov and D.D. Avrov
Dept. of Microelectronics, St. Petersburg Electrotechnical University, St. Petersburg, Russia

Simplification of scattering rates in nonparabolic balance equations...9:30-10:00 pm
X.M. Weng, H.J. Quan and H.L. Cui
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, NJ, USA

Session 3: SiC Devices II (Tuesday, 8:30 am -12:15 pm)
High-power SiC devices: new result and prospects (Invited)...8:30-9:30 am
A.A. Lebedev and Valentin E. Chelnokov
A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St. Petersburg, Russia

Electrical characteristics of 6H-SiC Schottky diodes - dependence on quality of epitaxial layer...9:30 am - 10:00 am
Ryuichi Asai
Fuji Electric Corporate Research and Development, Ltd., Yokosuka City, Japan

Break...10:00-10:15 am

Recent advances in SiC materials and device technologies in Sweden (Invited)...10:15-11:15 am
Mikael L. Ostling
Department of Electronics, Royal Institute of Technology, Stockholm, Sweden

Recent advances and high-power applications of SiC devices (Invited)...11:15 am - 12:15 pm
T. Paul Chow
Electrical and Computer Engineering Department, Rensselaer Polytechnic Institute, Troy, NY, USA

Session 4a: Passive Components (Tuesday, 7:30-9:00 pm)
High-temperature capacitors for power electronics (Invited)...7:30-8:30 pm
L. Mandelcorn, S.R. Gurkovich and K.C. Radford
Northrop-Grumman, Electronic Sensors and Systems Division, Science and technology Center, Pittsburgh, PA, USA

Ceramic dielectric performance characteristics at operating temperatures in excess of 200oC...8:30-9:00 pm
Jeff Day(1), Michael Roach(1) and John Maxwell(2)
(1)KD Components, Carson City, NV, USA
(2)JMA, Woodland Park, CO, USA

Session 4b: Novel Materials and Technologies (Tuesday, 9:00-10:00 pm)
Temperature dependence properties of a-SiNx:H obtained by magnetron sputtering...9:00-9:30 pm
Andrzej Kolodziej, Pawel Krewniak
University of Mining and Metallurgy, Institute of Electronics, Krakow, Poland

High-temperature amorphous-like semiconductors...9:30-10:00 pm
O.A. Golikova, M.M. Kazanin
A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St. Petersburg, Russia

Session 5: Si and SOI Technologies (Wednesday, 8:30 am -12:15 pm)
Study on Si integrated circuit operating up to 462oC (Invited)...8:30-9:30 am
Masatoshi Migitaka
Toyota Technological Institute, Nagoya, Japan

Low power ASIC for high temperature applications...9:30-10:00 am
O. Vermesan
SINTEF Electronics and Cybernetics, Microelectronics Group - ASICs group, Oslo, Norway

Break...10:00-10:15 am

Recent advances in SOI materials and device technologies for high temperature (Invited)...10:15-11:15 am
Sorin Cristoloveanu and G. Reichert
Laboratoire de Physique des Composants à Semiconducteurs, Grenoble, France

Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures...11:15-11:45 am
V. Dessard and D. Flandre
Université Catholique de Louvain, Microelectronics Laboratory, Louvain-la-Neuve, Belgium

High temperature performance of LDMOSFETs used in RFIC applications...11:45 am - 12:15 pm
P.Perugupalli(1), M. Trivedi(1), K. Shenai(1) and S.K. Leong(2)
(1)Systems on Silicon Research Center, Department of Electrical Engineering and Computer Science, University of Illinois at Chicago, Chicago, IL, USA
(2)Polyfet RF Devices, Camarillo, CA, USA

Session 6: Packaging - I (Wednesday, 7:30-10:00 pm)
Materials selection issues for high operating temperature (HOT) electronic packaging (Invited)...7:30-8:30 pm
Catherine Gallagher, Bryan Shearer and Goran Matijasevic
Ormet Corporation, Carlsbad, CA, USA

Materials properties with respect to microsystem technologies for elevated temperatures...8:30-9:00 pm
H.J. Fecht(1), C. Entl(1) and M. Werner(2)
(1)University of Ulm, Faculty of Engineering, Department of Materials,
Ulm, Germany

(2)VDI/VDE-IT, System Integration, Teltow, Germany

Properties of High Thermal Conductivity Carbon-Carbon Composites for Thermal Management Applications...9:00-9:30 pm
Ilan Golecki(1), Liang Xue(1), Roger Leung(2), Terence Walker(3)
(1)AlliedSignal, Inc., Research and Technology, Morristown, NJ; (2)Advance Microelectronic Materials, Sunnyvale, CA; (3)Aircraft Landing Systems, South Bend, IN

Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al2O3 in the temperature range 300-1800 K...9:30-10:00 pm
D.D. Avrov(1), A.S. Bakin(1), B.A. Bilalov(2), S.I. Dorozhkin(1), A.O. Lebedev(3), V.P. Rastegaev(1), G.K. Safaraliev(2), Sh.A. Shabanov(2) and Yu.M. Tairov(1)
(1)St. Petersburg Electrotechnical University, St. Petersburg, Russia
(2)Daghestan State University, Makhachkala, Daghestan, Russia
(3)A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St. Petersburg, Russia

Session 7: III-V Materials and Devices (Thursday, 8:30 am -12:15 pm)
Recent advances in GaAs devices for use at high temperatures (Invited)...8:30-9:30 am
Joachim Wurfl
Ferdinand Braun Institut fur Hochstfrequenztechnik, Berlin, Germany

Hybrid GaN/SiC high power diode for improved characteristics...9:30-10:00 am
Malay Trivedi and Krishna Shenai
Systems on Silicon Research Center, Department of Electrical Engineering and Computer Science, University of Illinois at Chicago, Chicago, IL, USA

Break...10:00-10:15 am

Advances in InGaN technology for light-emitting diodes and semiconductor lasers (Invited)...10:15-11:15 am
Serge Rudaz and Bob Fletcher
Optoelectronics Division, Hewlett-Packard Co., San Jose, CA, USA

Production of high-quality Al-Ga-In-N heterostructures MOVPE growth and characterization...11:15-11:45 am
D. Schmitz, R. Beccard, R. Niebuhr, B. Wachtendorf and H. Juergensen
Aixtron AG, Aachen, Germany

Properties of c-BN layers deposited on Si...11:45 am - 12:15 pm
J.C. Bourgoin
Groupe de Physique des Solides, Université Paris 6 et Paris 7, C.N.R.S./URA 17, Paris, France

Session 8: Packaging and Reliability - II (Thursday, 7:30-9:30 pm)
Reliability concerns in high temperature electronic systems (Invited)...7:30-8:30 pm
F. Patrick McCluskey(1) and Richard R. Grzybowski(2)
(1)CALCE EPRC, University of Maryland, College Park, MD, USA
(2)United Technologies Research Center, East Hartford, CT, USA

Advances in packaging technologies for electronics to 500oC (Invited)...8:30-9:30 pm
Richard R. Grzybowski
United Technologies Research Center, East Hartford, CT, USA

Session 9: Metallizations (Friday, 8:30 - 11:30 am)
High-temperature contact metallization to semiconductors (Invited)...8:30-9:30 am
Marc-A. Nicolet
Department of Electrical Engineering and Applied Physics, California Institute of Technology, Pasadena, CA, USA

High-temperature stability of ohmic contacts to GaN...9:30-10:00 am
Suzanne Mohney, Brian Luther, Hari Venugopalan and Scott Wolter
Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA

Break...10:00-10:15 am

High temperature stable metallization schemes for SiC-technology operating in air...10:15-10:45 am
K. Gottfried, J. Kriz, J. Leibelt, C. Kaufmann and T. Gessner
Center of Microtechnologies, Chemnitz University of Technology, Chemnitz, Germany

Diffusion barriers in titanium-based ohmic contact structures on SiC...10:45-11:15 am
R. Wenzel, F. Goesman, R. Schmid-Fetzer
Electronic Materials, technical University Clausthal, Clausthal-Zellerfeld, Germany

Concluding remarks...11:15-11:30 am
Ilan Golecki, Elzbieta Kolawa, Bernard Gollomp

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